ECR Based Chemically Assisted Plasma Etching Of GaAs

Etching of GaAs, when plasma of Ar gas is used and CF4 /O2 is directed fall on the wafer from another port in Electron Cyclotron Resonance (ECR) source in Chemically Assisted Ion Beam Etching (CAIBE) has been carried out. The plasma source was 2.45 GHz microwave source superimposed with mirror type magnetic field configuration to have resonance. Effect of CF4/O2/Ar ratio and substrate bias on etching rate of GaAs and anisotropy of etched profile has been investigated. Etching processes consists of many etching parameters such as the component of radicals and ions in plasma flow of gases, source power, pressure, substrate bias etc. Get maximum high etch rate with use specific ratio of gases CF4 /O2 and Ar, pressure 4x10 Torr, source power 700 W, substrate bias –30 V. Etched samples were characterized with Scanning Electron Microscope (SEM) and Dektek 3030ST from Veeco U.S.A.